experiment on Si

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    1. Prepare the crystallic sample.
    2. Induce defects in the structure by irradiation, mechanical stimulus or chemical doping (this one is really available only during synthesis but is a valid method of introducing impurities into the crystal structure as well).
    3. Collect the EPR spectra.
    4. Determine their first order derivatives: dA/dB, where A – amplitude of the EPR signal, B – magnetic field induction.
    5. The factor g is to be extracted from the Hamiltonian for the system.

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